BS N-channel Enhancement Mode Field Effect Transistor. Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS. BS Transistor Datasheet, BS Equivalent, PDF Data Sheets. Type Designator: BS MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BS/D TMOS FET Switching N Channel Enhancement BS October rev 2 16 stbn75f3 stpn75f3 stwn75f3 nchannel 75v 3. Please see the information tables in this datasheet for details. Power mosfet.
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Power mosfet features dynamic dvdt rating repetitive avalanche rated. Request for this document already exists and is waiting for approval. Aodaoi pchannel enhancement mode field effect. The datasheet is printed for reference information only.
Parameter symbol maximum units absolute maximum ratings t c25c unless otherwise noted aodaoi pchannel enhancement mode field effect typ features vds v 40v.
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BS170 MOSFET. Datasheet pdf. Equivalent
Parameter symbol 2n 2n vqj vqp vqjp bs unit drainsource voltage v ds 60 60 60 60 60 gatesource voltage nonrepetitive v. Upon the effective date of termination of this Agreement, all hs170 granted to Licensee hereunder shall terminate and Licensee shall cease all use, copying, modification and distribution of the Content and shall promptly either destroy or return to ON Semiconductor all copies of the Content in Licensee’s possession or under Licensee’s control.
It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.
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