30G Datasheet: GT45F IGBT V TOF, 30G PDF VIEW Download Toshiba, 30G 1 page Datasheet PDF, Pinouts, Data Sheet, Equivalent. Toshiba 30G Datasheet: GT45F IGBT V TOF, 30G Datasheet , 30G PDF, Datasheets PDF 30G, Pinout, Data Sheet, Circuits. Symbol. Min. Typ. Max. Units. BVCES. -. -. V. IGES. -. -. ± nA. ICES. -. -. 1. mA. VCE(sat). -. 3. V. -. -. V. VGE(th). 3. 7. V. Qg. -. nC.

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30GSW – APEC – Module – Kynix Semiconductor

However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. Learn More — opens in a new 300g122 or tab International 30g12 and import charges paid to Pitney Bowes Inc. Any items must be returned in their dayasheet condition to qualify for a refund or replacement. All parts are brand new with original packaging. Add to watch list. We Provode 6 months warranty for our product. Interest will be charged to your account from the purchase date if the balance is not paid in full within 6 months.


The IGBT has a low on-state voltage drop due to conductivity modulation.

Datasheet archive on 30-5-2011

Please click on the “Add to Cart” Button and then proceed to checkout. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques. Our aim is to perfect the dattasheet quality for a long-time business. Resume making your offerif the page does not update immediately. Items will be shipped within business days of payment. A brand-new, unused, unopened, undamaged item in its original packaging where packaging is applicable.

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Have one to sell? The supplier supports Trade Assurance — A free service that protects your orders from payment to delivery. The improvements in IGBTs will be spurred by optimized wafers, smaller pattern geometries and improved carrier lifetime control techniques. This item will ship to United Statesbut the seller has not specified shipping options. Toshiba offers a family of fast switching IGBTs, which are low in carrier injection and recombination in carrier.


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30G Datasheet, PDF – Qdatasheet

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